? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c96a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 225 a i ar t c = 25 c60a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-220 4 g to-247 6 g to-268 5 g g = gate d = drain s = source tab = drain ds99222e(02/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 24 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet v dss = 200 v i d25 =96a r ds(on) 24 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l fast intrinsic diode l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density g d s to-247 (ixfh) (tab) to-268 (ixft) g s d (tab) ixfh 96n20p ixft 96n20p ixfv 96n20p g s d d (tab) plus220 (ixfv)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 96n20p ixft 96n20p ixfv 96n20p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 52 s c iss 4800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1020 pf c rss 270 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 30 ns t d(off) r g = 4 ? (external) 75 ns t f 30 ns q g(on) 145 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 80 nc r thjc 0.25 c/w r thcs (to-247) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 96 a i sm repetitive 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 120 200 ns q rm -di/dt = 100 a/ s 0.7 c i rm v r = 100 v, v gs = 0 v 7 a to-268 (ixft) outline to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 plus220 (ixfv) outline
? 2006 ixys all rights reserved ixfh 96n20p ixft 96n20p ixfv 96n20p fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 02468101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 01234567 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 00.51 1.522.53 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alize d to 0.5 i d25 value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 96a i d = 48a v gs = 10v fig. 6. drain current vs. case tem perature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alize d to 0.5 i d25 value vs . i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v t j = 175oc
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 96n20p ixft 96n20p ixfv 96n20p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90 105 120 135 150 q g - nanocoulombs v g s - volts v ds = 100v i d = 48a i g = 10ma fig. 7. input adm ittance 0 20 40 60 80 100 120 140 160 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g s - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 200 i d - amperes g f s - siemens t j = -40oc 25oc 150oc fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved ixfh 96n20p ixft 96n20p ixfv 96n20p fig. 13. m axim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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